Reversible 300K Ferromagnetic Ordering in a Diluted Magnetic Semiconductor

TL;DR

This paper reports the first demonstration of reversible room-temperature ferromagnetic ordering in a diluted magnetic semiconductor, achieved by controlling native defects, opening new avenues for spintronic devices.

Contribution

It introduces a method to reversibly switch ferromagnetism at room temperature in Co2+:ZnO by defect manipulation, a novel achievement in the field.

Findings

Reversible ferromagnetism at 300K achieved in Co2+:ZnO.

Spectroscopic data support a double-exchange mechanism.

Potential for integrating magnetism with semiconductor devices.

Abstract

The discovery of reversible 300 K ferromagnetic ordering in a diluted magnetic semiconductor is reported. Switching of room-temperature ferromagnetism between "on" and "off" states is achieved in Co2+:ZnO by lattice incorporation and removal of the native n-type defect, interstitial Zn. Spectroscopic and magnetic data implicate a double-exchange mechanism for ferromagnetism. These results demonstrate for the first time reversible room-temperature ferromagnetic ordering in a diluted magnetic semiconductor, and present new opportunities for integrating magnetism and conductivity in semiconductor sensor or spin-based electronics devices.