Formation and Thermal Stability of sub-10 nm Carbon Templates on Si(100)

TL;DR

This paper presents a novel lithographic method to create sub-10 nm carbon templates on silicon using electron-beam induced deposition and annealing, enabling high-resolution patterning compatible with semiconductor fabrication.

Contribution

It introduces a low-vacuum electron-beam lithography process that forms and stabilizes ultra-small carbon templates on Si(100) surfaces, advancing nanoscale patterning techniques.

Findings

Carbon templates as small as 3.5 nm were achieved.

Annealing up to 1320 K removes contaminants without altering dot shape.

The process is compatible with subsequent semiconductor growth.

Abstract

We report a lithographic process for creating high-resolution (<10 nm) carbon templates on Si(100). A scanning electron microscope, operating under low vacuum (10E-6 mbar), produces a carbon-containing deposit ("contamination resist") on the silicon surface via electron-stimulated dissociation of ambient hydrocarbons, water and other adsorbed molecules. Subsequent annealing at temperatures up to 1320 K in ultra-high vacuum removes SiO2 and other contaminants, with no observable change in dot shape. The annealed structures are compatible with subsequent growth of semiconductors and complex oxides. Carbon dots with diameter as low as 3.5 nm are obtained with a 200 us electron-beam exposure time.