High Curie temperatures in ferromagnetic Cr-doped AlN thin films
D. Kumar, J. Antifakos, M. G. Blamire, Z. H. Barber
TL;DR
This study demonstrates that Cr-doped AlN thin films exhibit room-temperature ferromagnetism with Curie temperatures exceeding 900 K, indicating potential for high-temperature spintronic applications.
Contribution
The paper reports the synthesis of Cr-doped AlN thin films with high Curie temperatures above 900 K, a significant advancement over previous ferromagnetic semiconductors.
Findings
Room-temperature ferromagnetism observed in Cr-doped AlN.
Maximum saturation magnetic moment of 0.71 μB per Cr atom.
Curie temperature exceeds 900 K for x=0.027.
Abstract
Al1-xCrxN thin films with were deposited by reactive co-sputtering onto c-plane (001) sapphire. Room-temperature ferromagnetism with a coercive field of 85 Oe was observed in samples with chromium contents as low as x = 0.027 (2.7%). With increasing Cr content the mean magnetic moment is strongly suppressed, with a maximum saturation moment of 0.62 and 0.71 per Cr atom at 300 and 50 K respectively. We show that the Curie temperature of Al1-xCrxN for x = 0.027 is greater than 900 K.
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