Band structure effects in nitrogen K-edge resonant inelastic X ray scattering from GaN

TL;DR

This paper presents the first systematic RIXS data near the N K-edge in GaN, revealing band structure effects and enabling k-resolved band structure analysis for GaN materials.

Contribution

It provides the first systematic experimental RIXS data on GaN near the N K-edge, demonstrating band structure effects through excitation energy dependence.

Findings

Revealed band structure effects in GaN via RIXS

Demonstrated momentum selectivity in RIXS process

Enabled k-resolved band structure analysis

Abstract

Systematic experimental data on resonant inelastic X-ray scattering (RIXS) in GaN near the N K-edge are presented for the first time. Excitation energy dependence of the spectral structures manifests the band structure effects originating from momentum selectivity of the RIXS process. This finding allows obtaining k-resolved band structure information for GaN crystals and nanostructures.