Photoemission studies of the annealing induced modifications of (Ga,Mn)As
M. Adell (1), L. Ilver (1), J. Kanski (1), J. Sadowski (2, 3), R., Mathieu (4)
TL;DR
This study uses angle-resolved photoemission to examine how annealing affects the electronic structure of (Ga,Mn)As, revealing correlations between Fermi level shifts, Curie temperature, and valence band modifications.
Contribution
It provides new insights into how annealing alters the electronic and magnetic properties of (Ga,Mn)As through detailed photoemission analysis.
Findings
Fermi energy position varies with annealing time and temperature.
Curie temperature correlates with Fermi level and valence band separation.
Mn 3d spectrum is modified by annealing treatments.
Abstract
Using angle resolved photoemission we have investigated annealing-induced changes in Ga(1-x)Mn(x)As with x = 0.05. We find that the position of the Fermi energy is a function of annealing time and temperature. It is also established that the Curie temperature is strongly correlated to the separation between the Fermi level and the valence band maximum. Valence band photoemission shows that the Mn3d spectrum is modified by the annealing treatments
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