High-field magnetoresistance of Fe/GaAs/Fe tunnel junctions
M. Zenger, J. Moser, W. Wegscheider, D. Weiss, T. Dietl
TL;DR
This study examines the magnetoresistance behavior in Fe/GaAs/Fe tunnel junctions, revealing both positive and negative MR effects influenced by temperature and electrode material, with implications for spintronic device performance.
Contribution
It provides new insights into the temperature-dependent magnetoresistance effects and the role of electrode material in Fe/GaAs/Fe tunnel junctions.
Findings
Negative MR observed only with ferromagnetic Fe contacts
Negative MR possibly due to suppression of spin-flip scattering
Positive MR observed at higher temperatures
Abstract
We investigate transport through 6 to 10 nm thin epitaxial GaAs(001) barriers sandwiched between polycrystalline iron films. Apart from a pronounced tunneling magnetoresistance effect (TMR) at low magnetic fields we observe a distinct negative magnetoresistance (MR) at low and a positive MR at higher temperatures. We show that the negative MR contribution is only observed for the ferromagnetic iron contacts but is absent if iron is replaced by copper or gold electrodes. Possible explanations of the negative MR involve suppression of spin-flip scattering or Zeeman splitting of the tunneling barrier.
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