Giant planar Hall effect in colossal magnetoresistive La(0.84)Sr(0.16)MnO(3) thin films

TL;DR

This paper reports the observation of a giant planar Hall effect in La(0.84)Sr(0.16)MnO(3) thin films, which could be useful for magnetic sensing and memory applications.

Contribution

It demonstrates the presence of a giant planar Hall effect in LSMO thin films and links it to biaxial magnetic anisotropy, expanding understanding of magnetotransport in manganites.

Findings

Giant planar Hall effect observed in LSMO thin films.

Effect magnitude comparable to magnetic semiconductors.

Potential applications in magnetic sensors and memory devices.

Abstract

The transverse resistivity in thin films of La(0.84)Sr(0.16)MnO(3) (LSMO)exhibits sharp field-symmetric jumps below Tc. We show that a likely source of this behavior is the giant planar Hall effect (GPHE) combined with biaxial magnetic anisotropy. The effect is comparable in magnitude to that observed recently in the magnetic semiconductor Ga(Mn)As. It can be potentially used in applications such as magnetic sensors and non-volatile memory devices.