Pure spin current from one-photon absorption of linearly polarized light in noncentrosymmetric semiconductors

TL;DR

This paper demonstrates that linearly polarized light can generate pure spin currents in noncentrosymmetric semiconductors, supported by theoretical calculations for materials like GaAs and CdSe.

Contribution

It introduces a new mechanism for pure spin current generation via one-photon absorption in noncentrosymmetric semiconductors, with detailed modeling for specific materials.

Findings

Pure spin currents can be generated in GaAs and CdSe using linearly polarized light.

Theoretical models predict significant spin current effects in these materials.

Strain effects in GaAs influence the spin current generation.

Abstract

We show that one-photon absorption of linearly polarized light should produce pure spin currents in noncentrosymmetric semiconductors, including even bulk GaAs. We present 14x14 k.p model calculations of the effect in GaAs, including strain, and pseudopotential calculations of the effect in wurtzite CdSe.