A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation

TL;DR

This paper introduces a 3D quantum simulation method for silicon nanowire transistors using the effective-mass approximation, enabling efficient analysis of device physics and performance limits.

Contribution

It presents a practical 3D quantum simulation approach with mode space techniques and a simple scattering model for SNWTs, advancing device analysis capabilities.

Findings

Efficient 3D quantum simulation of SNWTs achieved.

Scattering effects modeled using Buttiker probes.

Simulation provides insights into device performance limits.

Abstract

The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation approach to treat various SNWTs within the effective-mass approximation. We begin by assuming ballistic transport, which gives the upper performance limit of the devices. The use of a mode space approach (either coupled or uncoupled) produces high computational efficiency that makes our 3D quantum simulator practical for extensive device simulation and design. Scattering in SNWTs is then treated by a simple model that uses so-called Buttiker probes, which was previously used in metal-oxide-semiconductor field effect transistor (MOSFET) simulations. Using this simple approach, the effects of scattering on both internal device characteristics and terminal currents can be examined, which enables our simulator to be used for the exploration of realistic performance limits of SNWTs.