Effects of the Two- Gap Nature on the Microwave Conductivity of 39 K Polycrystalline MgB2 Films

TL;DR

This study investigates the two-gap superconducting nature of MgB2 films through microwave conductivity measurements, revealing multiple coherence peaks and the effects of disorder on superconducting properties.

Contribution

It provides direct experimental evidence of the two-gap nature in MgB2 films and explores how disorder influences their microwave properties and gap energies.

Findings

Observation of two coherence peaks at ~0.5 Tc and ~0.9 Tc.

Ion-milling reduces Tc and normal-state conductivity, increases pi-band gap energy.

Enhanced inter-band scattering improves low-temperature microwave properties.

Abstract

The surface resistance (Rs) and the real part (sigma_1) of the microwave complex conductivity of a ~380 nm-thick polycrystalline MgB2 film with the critical temperature (Tc) of 39.3 K were investigated at ~8.5 GHz as a function of temperature. Two coherence peaks were observed in the sigma_1 versus temperature curve at temperatures of ~0.5 Tc and ~0.9 Tc, respectively, providing a direct evidence for the two-gap nature of MgB2. The film appeared to have a pi-band gap energy of 1.8 meV. For the MgB2 film ion-milled down to the thickness of ~320 nm, two coherence peaks were still observed with the first conductivity peak at ~0.6 Tc. Reduction of Tc by 3 K and reduced normal-state conductivity at Tc were observed along with an enhanced pi-band gap energy of 2.1 meV and a reduced Rs at temperatures below 15 K for the ion-milled film. Calculations based on the gap energies from the weak coupling Bardeen-Cooper-Schrieffer theory and the strong coupling theory suggest that both the sigma-band and the pi-band contribute to sigma_1 of the polycrystalline MgB2 films significantly. Our results are in contrast with the observation of single coherence peak at ~0.6 Tc and dominant role of the pi-band in the microwave conductivity of c-axis oriented MgB2 films as reported by Jin et al. [Phys. Rev. Lett. 91, 127006 (2003)]. Variations in the inter-band coupling constants with the level of disorder can account for the different Tc and sigma_1 behavior for the as-grown and ion-milled films. Our results suggest that enhanced inter-band scattering can improve microwave properties of MgB2 filims at low temperatures due to the larger pi-band gap despite the reduction of Tc.