Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction

TL;DR

This paper demonstrates current-driven magnetization reversal in a (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction at 30 K, showing low critical current densities and discussing potential mechanisms behind the effect.

Contribution

It reports the first observation of current-induced magnetization switching in a ferromagnetic semiconductor tunnel junction at low temperatures.

Findings

Magnetization switching occurs at critical currents of 1.1 - 2.2 x 10^5 A/cm^2.

Switching is achieved despite strong spin-orbit interaction in the system.

The study discusses possible mechanisms for the observed reversal.

Abstract

Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5 x 0.3 um^2 device revealed that magnetization switching occurs at low critical current densities of 1.1 - 2.2 x 10^5 A/cm^2 despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed.