Spin depolarization in the transport of holes across GaMnAs/GaAlAs/p-GaAs

TL;DR

This paper investigates how spin-orbit interactions affect the spin polarization of holes tunneling from ferromagnetic GaMnAs into p-GaAs, revealing limitations on spin injection efficiency and depolarization effects depending on magnetization orientation.

Contribution

It provides an analysis of spin depolarization mechanisms in hole tunneling across GaMnAs/GaAlAs/p-GaAs structures, highlighting the impact of spin-orbit interactions and magnetization orientation.

Findings

Spin-orbit interaction limits spin injection efficiency.

Spin depolarization is stronger with parallel magnetization.

An upper limit to the spin injection rate is established.

Abstract

We study the spin polarization of tunneling holes injected from ferromagnetic GaMnAs into a p-doped semiconductor through a tunneling barrier. We obtain an upper limit to the spin injection rate. We find that spin-orbit interaction interaction in the barrier and in the drain limits severely spin injection. Spin depolarization is stronger when the magnetization is parallel to the current than when is perpendicular to it.