Hall effect in Fe$_3$O$_4$ epitaxial thin films

TL;DR

This study reports on the magnetic and electronic properties of epitaxial Fe₃O₄ thin films, highlighting their similarity to bulk material and analyzing their Hall effect to understand charge carriers.

Contribution

It demonstrates that Fe₃O₄ thin films prepared by pulsed laser deposition retain bulk-like properties and provides detailed Hall effect measurements at room temperature.

Findings

Saturation magnetization of 453 emu/cm³ at room temperature

Conductivity of 225 1/(Ohm cm) at room temperature

Verwey transition at 117 K

Abstract

Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick films, the saturation magnetization and conductivity are respectively 453 emu/cm^3 and 225 1/(Ohm cm) at room temperature. The Verwey transition is at 117 K. The Hall effect indicates an electron concentration corresponding to 0.22 electrons per formula unit at room temperature. Normal and anomalous Hall effect both have a negative sign.