Spin Depolarization in Quantum Wires Polarized Spontaneously in a Zero Magnetic Field

TL;DR

This paper investigates the spontaneous spin polarization and depolarization in quantum wires at zero magnetic field, analyzing how carrier concentration influences the 0.7 conductance feature and spin states.

Contribution

It provides a theoretical analysis of spin depolarization conditions in quantum wires and links these to the 0.7 conductance feature evolution, using the Hartree-Fock approximation.

Findings

Critical carrier concentration for spin depolarization is identified.

The 0.7 feature approaches 0.5 (2e2/h) indicating spin degeneracy lifting.

Variation in the 0.7 feature correlates with carrier concentration changes.

Abstract

The conditions for a spontaneous spin polarization in a quantum wire positioned in a zero magnetic field are analyzed under weak population of one-dimensional subbands that gives rise to the efficient quenching of the kinetic energy by the exchange energy of carriers. The critical linear concentration of carriers above which the quasi one-dimensional gas undergoes a complete spin depolarization is determined by the Hartree-Fock approximation. The dependence of the critical linear concentration on the concentration of carriers is defined to reveal the interplay of the spin depolarization with the evolution of the 0.7 (2e2/h) feature in the quantum conductance staircase from the e2/h to 3/2 (e2/h) values. This dependence is used to study the effect of the hole concentration on the 0.7 (2e2/h) feature in the quantum conductance staircase of the quantum wire prepared inside the p-type silicon quantum well using the split-gate technique. The 1D channel is demonstrated to be spin-polarized at the linear concentration of holes lower than the critical linear concentration, because the 0.7 (2e2/h) feature is close to the value of 0.5 (2e2/h) that indicates the spin degeneracy lifting for the first step of the quantum conductance staircase. The 0.7 (2e2/h) feature is found to take however its normal magnitude when the linear concentration of holes attains the critical value corresponding to the spin depolarization. The variations in the height of the 0.7 (2e2/h) feature observed in the hole quantum conductance staircase that is revealed by the p-type silicon quantum wire seem to be related to the evidences of the quantum conductance staircase obtained by varying the concentration of electrons in the 1D channel prepared inside the GaAs-AlGaAs heterojunction.