A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs

TL;DR

This paper introduces a novel epitaxial growth method for precisely positioning and ordering high-quality InAs quantum dots on (110) GaAs using a combination of self-assembly and molecular beam epitaxy.

Contribution

It presents a new technique integrating self-assembly with in-situ cleaved-edge overgrowth to achieve long-range ordered quantum dot arrays with nanometer precision.

Findings

Successful fabrication of ordered InAs quantum dot arrays

Demonstrated control over size, position, and ordering

Confirmed high optical quality of quantum dots

Abstract

We report on a new approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in-situ cleaved surfaces (cleaved-edge overgrowth) we have successfully fabricated arrays of long-range ordered InAs quantum dots. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot photoluminescence investigations confirm the high optical quality of the quantum dots fabricated.