Inter-edge strong-to-weak scattering evolution at a constriction in the fractional quantum Hall regime

TL;DR

This paper investigates how gate voltage influences inter-edge tunneling in the fractional quantum Hall regime, revealing a transition from strong to weak scattering and emphasizing the importance of local filling factors in quasiparticle transport.

Contribution

It provides experimental evidence and analysis of the evolution from strong to weak scattering at a constriction, aligning with theoretical predictions for quasiparticle behavior in fractional quantum Hall systems.

Findings

Zero-bias tunneling conductance peak evolves into a minimum

Non-linear quasihole-like characteristics emerge at lower backscattering

Quantitative agreement with out-of-equilibrium quasiparticle transport theory

Abstract

Gate-voltage control of inter-edge tunneling at a split-gate constriction in the fractional quantum Hall regime is reported. Quantitative agreement with the behavior predicted for out-of-equilibrium quasiparticle transport between chiral Luttinger liquids is shown at low temperatures at specific values of the backscattering strength. When the latter is lowered by changing the gate voltage the zero-bias peak of the tunneling conductance evolves into a minimum and a non-linear quasihole-like characteristic emerges. Our analysis emphasizes the role of the local filling factor in the split-gate constriction region.