Self-consistent calculation of semiconductor heterojunctions by using quantum genetic algorithm

TL;DR

This paper presents a self-consistent method using quantum genetic algorithms to analyze the electronic properties of semiconductor heterojunctions, including energy levels, potential profiles, and charge tunneling, with parameter dependence.

Contribution

It introduces a novel application of quantum genetic algorithms for self-consistent calculation of heterojunction electronic properties.

Findings

Calculated ground state energy levels and potential profiles.

Analyzed the dependence of electronic properties on device parameters.

Provided insights into tunneling charge behavior.

Abstract

In this study, we have investigated the ground state energy level of electrons in modulation doped GaAs/AlxGa1-xAs heterojunctions. For this purpose, Schrodinger and Poisson equations are solved self consistently using quantum genetic algorithm (QGA). Thus, we have found the potential profile, the ground state subband energy and their corresponding envelope functions, Fermi level, and the amount of tunneling charge from barrier to channel region. Their dependence on various device parameters are also examined.