Conductance modulation in spin field-efect transistors under finite bias voltages

TL;DR

This paper investigates how finite bias voltages influence conductance modulation in spin field-effect transistors, revealing that both gate-controlled Rashba spin-orbit coupling and bias voltage affect device behavior.

Contribution

It demonstrates that conductance modulation in spin FETs depends on both Rashba spin-orbit coupling and bias voltage, highlighting the combined effect on spin precession states.

Findings

Conductance modulation depends on bias voltage.

Spin precession states are influenced by bias and gate voltages.

Bias voltage affects Rashba spin-orbit coupling impact.

Abstract

The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession states of injected spin-polarized electrons in the semiconductor channel of the device will depend not only the gate-voltage controlled Rashba spin-orbit coupling but also depend on the bias voltage and, hence, the conductance modulation in the device due to Rashba spin-orbit coupling may also depend sensitively on the bias voltage.