Shot noise in tunneling through a single quantum dot

TL;DR

This paper studies the shot noise characteristics in electron tunneling through a single InAs quantum dot, revealing how bias voltage and temperature influence noise and current, with analysis based on a master equation model.

Contribution

It provides new insights into the noise behavior of quantum dot tunneling, linking Fano factor variations to emitter density of states and Fermi functions.

Findings

Fano factor and current depend linearly on bias voltage

Noise characteristics are influenced by the emitter density of states

Voltage and temperature effects align with master equation predictions

Abstract

We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as function of bias voltage. Both effects can be linked to the scanning of the 3-dimensional emitter density of states by the QD. At the current step the shape of the Fano factor is mainly determined by the Fermi function of the emitter electrons. The observed voltage and temperature dependence is compared to the results of a master equation approach.