Dielectric Function of Diluted Magnetic Semiconductors in the Infrared Regime

TL;DR

This paper investigates the dielectric properties of metallic (III,Mn)V diluted magnetic semiconductors in the infrared, using a theoretical model to understand their optical behavior and implications for experimental measurements.

Contribution

It introduces a theoretical framework based on the kinetic exchange model to calculate the dielectric function of (III,Mn)V semiconductors in the infrared regime.

Findings

Dielectric function calculated within the random phase approximation.

Disorder and thermal effects treated perturbatively and via mean field approximation.

Implications for carrier concentration measurements and plasmon-phonon modes analyzed.

Abstract

We present a study of the dielectric function of metallic (III,Mn)V diluted magnetic semiconductors in the infrared regime. Our theoretical approach is based on the kinetic exchange model for carrier induced (III,Mn)V ferromagnetism. The dielectric function is calculated within the random phase approximation and, within this metallic regime, we treat disorder effects perturbatively and thermal effects within the mean field approximation. We also discuss the implications of this calculations on carrier concentration measurements from the optical f-sum rule and the analysis of plasmon-phonon coupled modes in Raman spectra.