Ellipsometric detection of transitional surface structures on decapped GaAs(001)

TL;DR

This study uses ellipsometry and diffraction to analyze surface structure transitions on GaAs(001) during heating, revealing distinct optical responses for different transition types and establishing correlations between structural and optical data.

Contribution

It demonstrates for the first time that ellipsometry can distinguish between order-order and order-disorder surface transitions on GaAs(001).

Findings

Correlation established between diffraction and optical data during transitions.

Boundary lines for superstructures determined as a function of As flux.

Optical response differs drastically between transition types.

Abstract

Structural and optical properties of MBE-grown GaAs(001) surface have been studied by reflection high-energy electron diffraction and single-wavelength ellipsometry under dynamic conditions of ramp heating after desorption of passivating As-cap-layer with and without As4 beam applied to the surface. For a number metastable reconstruction transitions a clear correlation is stablished between diffraction and optical data. Boundary lines for transitional superstructures are determined as a function of As flux and corresponding activation energies are estimated. For the first time it is shown ellipsometrically that optical response of the surface is drastically different for transitions of the order->order and order->disorder type.