Shot noise in resonant tunneling through a zero-dimensional state with a complex energy spectrum

TL;DR

This paper studies shot noise in a GaAs/AlGaAs resonant tunneling device, revealing suppression at certain biases and super-Poissonian noise at high biases, advancing understanding of quantum transport phenomena.

Contribution

It introduces a model for shot noise suppression and super-Poissonian behavior in resonant tunneling through a zero-dimensional state with complex energy spectrum.

Findings

Shot noise is suppressed at specific bias voltages.

Super-Poissonian shot noise with Fano factor up to 10 observed at high biases.

The results support a two-state system model for noise behavior.

Abstract

We investigate the noise properties of a GaAs/AlGaAs resonant tunneling structure at bias voltages where the current characteristic is determined by single electron tunneling. We discuss the suppression of the shot noise in the framework of a coupled two-state system. For large bias voltages we observed super-Poissonian shot noise up to values of the Fano factor $\alpha \approx 10$.