Resistivity model for both paramagnetic and ferromagnetic phases

TL;DR

This paper develops a resistivity model applicable to both paramagnetic and ferromagnetic phases, incorporating effects of temperature, doping, and magnetization, and validates it with experimental data on GaMnAs.

Contribution

The paper introduces a resistivity model that accounts for spin-disorder scattering in both magnetic phases, aligning well with experimental observations.

Findings

Calculated $T_{crossover}$ matches experimental values (8-12 K).

Predicted carrier density aligns with experimental data (10$^{18}$-10$^{20}$ cm$^{-3}$).

Model effectively describes resistivity behavior across magnetic phases.

Abstract

The resistivity, $\rho$ as a function of temperature and ionization energy (doping) and magnetization respectively is derived with further confinements from spin-disorder scattering. The computed $T_{crossover}$ below $T_C$ and carrier density in Ga$_{1-x}$Mn$_x$As system are 8-12 K and 10$^{19}$ cm$^{-3}$, remarkably identical with the experimental values of 10-12 K and 10$^{18}-10^{20}$ cm$^{-3}$ respectively.