Electron spin phase relaxation of phosphorus donors in nuclear spin enriched silicon

TL;DR

This study investigates how electron spins of phosphorus donors relax in isotopically purified and natural silicon at low temperature using pulsed EPR, providing insights into spin coherence for quantum applications.

Contribution

It presents the first detailed pulsed EPR measurements of electron spin phase relaxation in phosphorus-doped silicon with different isotopic compositions.

Findings

Electron spin relaxation times vary with silicon isotopic purity.

Phase relaxation behavior differs between purified and natural silicon.

Results inform the design of silicon-based quantum devices.

Abstract

We report a pulsed EPR study of the phase relaxation of electron spins bound to phosphorus donors in isotopically purified 29^Si and natural abundance Si single crystals measured at 8 K.