High-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates

TL;DR

This paper demonstrates high-performance carbon nanotube transistors on SrTiO3/Si substrates, achieving high transconductance likely due to reduced Schottky barriers at the nanotube-electrode interface.

Contribution

It reports the growth of SWNTs on SrTiO3/Si substrates and the fabrication of transistors with unprecedented transconductance, highlighting the role of high-kappa dielectric in device performance.

Findings

Transconductance of 8900 S/m achieved.

High-kappa SrTiO3 reduces Schottky barriers.

Enhanced electric field improves transistor performance.

Abstract

Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 S/m. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube-electrode interface due to the high-kappa SrTiO3 decreases or eliminates the nanotube-electrode Schottky barrier.