Strongly Non-Arrhenius Self-Interstitial Diffusion in Vanadium
Luis A. Zepeda-Ruiz, Joerg Rottler, Seungwu Han, Graeme J. Ackland,, Roberto Car, David J. Srolovitz

TL;DR
This study investigates the diffusion behavior of self-interstitial atoms in vanadium, revealing a transition from non-Arrhenius to Arrhenius kinetics with increasing temperature, driven by changes in diffusion mechanisms.
Contribution
It provides new insights into the temperature-dependent diffusion mechanisms of SIAs in vanadium, highlighting the breakdown of Arrhenius behavior at high temperatures.
Findings
Diffusion is one-dimensional at low temperatures.
Diffusion becomes isotropic at higher temperatures due to rotation.
Diffusivity transitions from Arrhenius to linear with temperature above 600 K.
Abstract
We study diffusion of self-interstitial atoms (SIAs) in vanadium via molecular dynamics simulations. The <111>-split interstitials are observed to diffuse one-dimensionally at low temperature, but rotate into other <111> directions as the temperature is increased. The SIA diffusion is highly non-Arrhenius. At T<600 K, this behavior arises from temperature-dependent correlations. At T>600 K, the Arrhenius expression for thermally activated diffusion breaks down when the migration barriers become small compared to the thermal energy. This leads to Arrhenius diffusion kinetics at low T and diffusivity proportional to temperature at high T.
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