Influence of well width fluctuations on the binding energy of excitons, charged excitons and biexcitons in GaAs-based quantum wells

TL;DR

This study uses first-principle path integral Monte-Carlo simulations to analyze how well width fluctuations affect the binding energies of excitons, trions, and biexcitons in GaAs quantum wells, aligning well with experimental data.

Contribution

It provides a detailed first-principles analysis of the impact of well width fluctuations on excitonic binding energies in GaAs quantum wells.

Findings

Binding energies depend on well width fluctuations and quantum well width.

Numerical results agree quantitatively with experimental data.

Well width fluctuations significantly influence excitonic properties.

Abstract

We present a first-principle path integral Monte-Carlo (PIMC) study of the binding energy of excitons, trions (positively and negatively charged excitons) and biexcitons bound to single-island interface defects in quasi-two-dimensional GaAs/Al$_{x}$Ga$_{1-x}$As quantum wells. We discuss in detail the dependence of the binding energy on the size of the well width fluctuations and on the quantum-well width. The numerical results for the well width dependence of the exciton, trions and biexciton binding energy are in good quantitative agreement with the available experimental data.