Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides

TL;DR

This paper presents the fabrication of novel transition metal dichalcogenide-based FETs with high mobility, low threshold, and ambipolar operation, suitable for flexible electronics.

Contribution

It introduces a new type of FET using layered inorganic semiconductors with record-high charge mobility and mechanical flexibility.

Findings

Charge mobility up to 500 cm²/Vs in WSe₂ FETs.

FETs exhibit ambipolar operation.

Potential for flexible electronic applications.

Abstract

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/Vs for the p-type conductivity in the WSe2-based FETs at room temperature). These novel FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in "flexible" electronics.