Recombination and Lifetimes of Charge Carriers in Semiconductors

TL;DR

This paper critiques existing models of electron-hole recombination in semiconductors, proposes more accurate self-consistent expressions, and clarifies conditions for correctly defining charge carrier lifetimes, including effects of temperature inhomogeneity.

Contribution

It introduces improved models for electron-hole recombination that align with Maxwell's electrodynamics and clarifies the conditions for defining charge carrier lifetimes.

Findings

Existing models conflict with Maxwell's electrodynamics.

Correct electron and hole lifetimes are only defined when their nonequilibrium concentrations are equal.

Recombination rate for hot electrons depends on differing electron and hole temperatures.

Abstract

In this Communication, it is shown that models used for describing generation and recombination of electrons and holes lead to disagreements with Maxwell's electrodynamics. Self-consistent expressions, more adequately depicting the actual physical processes of electron-hole recombination in semiconductors are obtained. It is shown that the electron and hole lifetimes can be defined correctly only for the special cases when the electron and hole nonequilibrium concentrations are the same, these lifetimes being equal. The influence of temperature inhomogeneity on the recombination is also considered. The recombination rate for hot electrons is obtained in the case when the electron and hole temperatures differ.