The pseudomorphic to bulk fcc phase transition of thin Ni films on Pd(100)
G.A. Rizzi (1), A. Cossaro (2), M. Petukhov (1), F. Sedona (1), G., Granozzi (1), F. Bruno (2), D. Cvetko (2), A. Morgante (2), and L. Floreano, (2) ((1) University of Padova, Italy; (2) Lab. TASC-INFM, Trieste, Italy.)

TL;DR
This study investigates the transformation of pseudomorphic Ni films on Pd(100) into their bulk fcc phase, revealing a lateral growth mechanism and interface intermixing effects through x-ray techniques.
Contribution
It provides detailed insights into the phase transition mechanism and interface evolution of Ni films on Pd(100), highlighting the lateral growth of bulk-like domains and intermixing effects.
Findings
Pseudomorphic Ni films grow up to 10 layers before transitioning.
Bulk-like fcc phase forms via lateral growth within pseudomorphic domains.
Intermixing at the substrate interface increases during the transition.
Abstract
We have measured the transformation of pseudomorphic Ni films on Pd(100) into their bulk fcc phase as a function of the film thickness. We made use of x-ray diffraction and x-ray induced photoemission to study the evolution of the Ni film and its interface with the substrate. The growth of a pseudomorphic film with tetragonally strained face centered symmetry (fct) has been observed by out-of-plane x-ray diffraction up to a maximum thickness of 10 Ni layers (two of them intermixed with the substrate), where a new fcc bulk-like phase is formed. After the formation of the bulk-like Ni domains, we observed the pseudomorphic fct domains to disappear preserving the number of layers and their spacing. The phase transition thus proceeds via lateral growth of the bulk-like phase within the pseudomorphic one, i.e. the bulk-like fcc domains penetrate down to the substrate when formed. This large…
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