Generalized Friedel sum rule and anomalies of the mobility due to the resonant scattering of electrons by donor impurities in semiconductors

TL;DR

This paper develops a theoretical model based on Friedel's approach to describe how resonance scattering by donor impurities affects electron mobility in semiconductors, explaining observed anomalies.

Contribution

It introduces a generalized Friedel sum rule accounting for electron concentration stabilization at resonance levels, explaining mobility anomalies in doped semiconductors.

Findings

Maximum in electron concentration dependence observed

Temperature dependence anomalies explained by the model

Application to mercury selenide with iron impurities discussed

Abstract

On the basis of Friedel approach the theoretical description of the effects of resonance scattering of conduction electrons by donor impurities in semiconductors with allowance for the stabilization of electron concentration in coinciding the Fermi energy with the resonance level energy has been developed. It has been shown that such a stabilization gives rise to the appearance of maximum in concentration dependence and to its related anomalies of temperature dependences of electron mobility. The advantage of the application of the approach based on the proposed theory to the interpretation of experimental data on mercury selenide with iron impurities is discussed. PACS: 72.20.Dp; 72.20.Fr Keywords: semiconductors, impurities in semiconductors, electron states, electron transport