Possibility of a Metallic Field-Effect Transistor

TL;DR

This paper presents theoretical evidence that metallic field-effect transistors can be realized in one-dimensional systems like carbon nanotubes by using inhomogeneous electric fields to induce energy gaps, enabling transistor functionality.

Contribution

It introduces a novel concept of metallic FETs in nanotubes driven by electric fields, expanding the potential for high-conductance nanoelectronic devices.

Findings

Electric fields can induce energy gaps in metallic nanotubes.

Energy barriers formed enable transistor switching.

High conductance is maintained in the ON state.

Abstract

We develop theoretical arguments that demonstrate the possibility of metallic field-effect transistors (METFET's) in one-dimensional systems and particularly in armchair carbon nanotubes. A very inhomogeneous electric field, such as the field of a tunnelling tip, can penetrate the relatively weakly screened nanotubes and open an energy gap. As a consequence, an energy barrier forms that impedes electron flow and thus permits transistor action. This type of metallic field effect is advantageous because of the high conductance of the metallic tubes in the ON--state.