Reply to Comment (cond-mat/0311174)
V.M. Pudalov, M.E. Gershenson, H. Kojima, G. Brunthaler, and G. Bauer
TL;DR
This paper confirms that experimental data on resistivity and conductivity in high-mobility Si-MOS structures align with the interaction correction theory in the ballistic regime without using fitting parameters.
Contribution
It provides a parameter-free quantitative comparison between experimental results and the interaction correction theory for high-mobility Si-MOS structures.
Findings
Experimental data agree with the theory in the ballistic regime
No fitting parameters were used in the comparison
Results validate the interaction correction theory for these structures
Abstract
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, T\tau >1. Our comparison does not involve any fitting parameters.
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Taxonomy
TopicsSemiconductor materials and devices · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence