Resonance magneto-resistance in double barrier structure with spin-valve
N. Ryzhanova, G. Reiss, F. Kanjouri, A. Vedyayev
TL;DR
This paper theoretically investigates the conductance and tunnel magneto-resistance in a double barrier magnetic tunnel junction with a spin-valve, revealing resonance effects and high TMR values depending on magnetic orientation.
Contribution
It introduces a theoretical model showing how quantum well states influence TMR in a double barrier structure with a spin-valve.
Findings
Resonant tunnelling depends on ferromagnetic layer orientation.
Calculated TMR exceeds 2000%.
Quantum well states sharply affect conductance.
Abstract
The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant tunnelling, due to the quantum well states of the electron confined between two barriers, sharply depends on the mutual orientation of the magnetizations of ferromagnetic layers F. The calculated optimistic value of TMR exceeds 2000% .
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