Low-frequency noise as a source of dephasing of a qubit
Y. M. Galperin, B. L. Altshuler, D. V. Shantsev

TL;DR
This paper develops a theoretical framework to understand how 1/f noise from bistable fluctuators causes dephasing in solid-state qubits, explaining observed decoherence features.
Contribution
It introduces a non-Gaussian, non-Markovian model for qubit dephasing due to two-state fluctuators, extending previous Gaussian noise assumptions.
Findings
Analytical expressions for qubit decoherence under 1/f noise
Validation of theory through simulations and comparison with experiments
Insights into echo decay behavior in Josephson qubits
Abstract
With the growing efforts in isolating solid-state qubits from external decoherence sources, the material-inherent sources of noise start to play crucial role. One representative example is electron traps in the device material or substrate. Electrons can tunnel or hop between a charged and an empty trap, or between a trap and a gate electrode. A single trap typically produces telegraph noise and can hence be modeled as a bistable fluctuator. Since the distribution of hopping rates is exponentially broad, many traps produce flicker-noise with spectrum close to 1/f. Here we develop a theory of decoherence of a qubit in the environment consisting of two-state fluctuators, which experience transitions between their states induced by interaction with thermal bath. Due to interaction with the qubit the fluctuators produce 1/f-noise in the qubit's eigenfrequency. We calculate the results of…
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