Field Effect Transistor Based on KTaO3 Perovskite
K.Ueno, I.H.Inoue, T.Yamada, H.Akoh, Y.Tokura, H.Takagi (Correlated, Electron Research Center, National Institute of Advanced Indus trial Science, and Technology)
TL;DR
This paper reports the fabrication of a KTaO3-based n-channel FET with high ON/OFF ratio and stable mobility, showing promise for future oxide electronic devices.
Contribution
It introduces a novel KTaO3 FET with improved performance metrics over previous SrTiO3 devices, highlighting the potential of Al2O3/KTaO3 interfaces.
Findings
ON/OFF ratio of 10^4 at room temperature
Field effect mobility of 0.4cm^2/Vs
Mobility stable down to 200K
Abstract
An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4 and a field effect mobility of 0.4cm^2/Vs at room temperature, both of which are much better than those of the SrTiO3 FETs reported previously. The field effect mobility was almost temperature independent down to 200K. Our results indicate that the Al2O3 / KTaO3 interface is worthy of further investigations as an alternative system of future oxide electronics.
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