Spin Gain Transistor in Ferromagnetic Semiconductors: the Semiconductor Bloch Equations Approach

TL;DR

This paper proposes a spin gain transistor using ferromagnetic semiconductors, predicting a gain over 1000 by leveraging collective spin dynamics modeled through Semiconductor Bloch Equations.

Contribution

It introduces a novel spin gain transistor scheme and models its collective spin dynamics with Semiconductor Bloch Equations, predicting high spin gain.

Findings

Predicted spin gain exceeds 1000

Proposed a new operation scheme for spin transistors

Modeled spin dynamics with Semiconductor Bloch Equations

Abstract

Scheme and principle of operation of a spin gain transistor are proposed: a large unmagnetized current creates density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization; large magnetized current is extracted. Therefore spin gain of more than 1000 is predicted. Collective dynamics of spins under Coulomb exchange interaction is described via Semiconductor Bloch Equations.