Single Crystal Growth of Skutterudite CoP3 under High Pressure
C. H. Lee, H. Kito, H. Ihara, K. Akita, N. Yanase, C. Sekine, I., Shirotani
TL;DR
This paper presents a high-pressure method for growing single crystals of CoP3 skutterudite, demonstrating that CoP3 can be synthesized as a single phase under these conditions.
Contribution
It introduces a novel high-pressure technique for single crystal growth of CoP3, showing that CoP3 is a congruent melting compound under high pressure.
Findings
Successful growth of single-phase CoP3 crystals
CoP3 is a congruent melting compound under high pressure
High-pressure method yields high-quality crystals
Abstract
A new method to grow single crystals of skutterudite compounds is examined. Using a wedge-type, cubic-anvil, high-pressure apparatus, single crystals of CoP3 were grown from stoichiometric melts under a pressure of 3.5 GPa. Powder x-ray diffraction and electron probe microanalysis measurements indicate that the as-grown boules are a single phase of CoP3. The results suggest that CoP3 is a congruent melting compound under high pressure.
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