A New Mean-Field Theory of the Kondo Resonance at Finite Bias
Jung Hoon Han (Sung Kyun Kwan University)

TL;DR
This paper presents a novel slave-boson mean-field approach to analyze the Kondo effect in quantum dots under finite bias, revealing how the Kondo temperature scales with bias voltage.
Contribution
The study introduces a new mean-field model with multiple slave bosons and pseudo-fermions to better understand the Kondo resonance at finite bias.
Findings
Two resonance peaks aligned with lead chemical potentials.
Kondo temperature scales as min(T*, (T*)^2/V).
Model captures bias-dependent Kondo behavior.
Abstract
We introduce a new slave-boson mean-field treatment of the Kondo effect in a quantum dot attached to the leads, when the bias voltage across the leads is finite. The model employs two slave boson and two pseudo-fermion operators to express the localized electron. The solution of the mean-field equations gives in general two resonance peaks pinned to the chemical potential of each lead. The Kondo temperature is shown to scale as , where is the Kondo temperature at equilibrium, and is the chemical potential difference of the leads.
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Advanced Physical and Chemical Molecular Interactions
