g-factor engineering and control in self-assembled quantum dots

TL;DR

This paper explores how to control and engineer electron and hole g-factors in self-assembled InAs quantum dots within GaAs, aiming to advance solid-state spin-based quantum information processing.

Contribution

It demonstrates methods for g-factor control and engineering in self-assembled quantum dots, highlighting their potential for quantum information applications.

Findings

g-factors are material-dependent and influenced by spin-orbit coupling

Quantum dots enable controllable trapping of electrons for quantum devices

Potential for tailored g-factors in quantum information processing

Abstract

The knowledge of electron and hole g-factors, their control and engineering are key for the usage of the spin degree of freedom for information processing in solid state systems. The electronic g-factor will be materials dependent, the effect being larger for materials with large spin-orbit coupling. Since electrons can be individually trapped into quantum dots in a controllable manner, they may represent a good platform for the implementation of quantum information processing devices. Here we use self-assembled quantum dots of InAs embedded in GaAs for the g-factor control and engineering.