P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy

TL;DR

This study demonstrates the successful growth of cubic GaMnN layers with P-type conductivity via molecular beam epitaxy, confirming Mn incorporation and uniform distribution, and analyzing the resulting electrical properties.

Contribution

It presents the first detailed analysis of P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy with Mn doping up to 0.1.

Findings

Mn is uniformly incorporated into cubic GaN layers.

Cubic GaMnN remains phase-pure without separation up to x<0.1.

Room temperature hole concentration varies non-linearly with Mn doping, from 3x10^16 to 5x10^18 cm^-3.

Abstract

Cubic (zinc-blende) Ga1-xMnxN layers were grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Some of the structures also contained cubic AlN buffer layers. Auger Electron Spectroscopy and Secondary Ion Mass Spectroscopy studies clearly confirmed the incorporation of Mn into cubic GaN, the Mn being uniformly distributed through the layer. X-ray diffraction studies demonstrated that the Mn-doped GaN films are cubic and do not show phase separation up to a Mn concentrations of x<0.1. P-type conductivity for the cubic Ga1-xMnxN layers was observed for a wide range of the Mn doping levels. The measured hole concentration at room temperature depends non-linearly on the Mn incorporation and varies from 3x10^16 to 5x10^18 cm-3.