Spin-polarized current amplification and spin injection in magnetic bipolar transistors
Jaroslav Fabian, Igor Zutic

TL;DR
This paper develops a low-injection theory for magnetic bipolar transistors (MBTs), demonstrating how spin injection and control of current amplification can be achieved through equilibrium and nonequilibrium spins, leading to potential giant magnetoamplification effects.
Contribution
It introduces a comprehensive low-injection spin transport theory for MBTs, highlighting mechanisms for electrical spin injection and spin-controlled current amplification.
Findings
Spin can be injected from emitter to collector in MBTs.
Equilibrium spin in the base affects current amplification.
Giant magnetoamplification effect observed with spin-valve configurations.
Abstract
The magnetic bipolar transistor (MBT) is a bipolar junction transistor with an equilibrium and nonequilibrium spin (magnetization) in the emitter, base, or collector. The low-injection theory of spin-polarized transport through MBTs and of a more general case of an array of magnetic {\it p-n} junctions is developed and illustrated on several important cases. Two main physical phenomena are discussed: electrical spin injection and spin control of current amplification (magnetoamplification). It is shown that a source spin can be injected from the emitter to the collector. If the base of an MBT has an equilibrium magnetization, the spin can be injected from the base to the collector by intrinsic spin injection. The resulting spin accumulation in the collector is proportional to , where is the proton charge, is the bias in the emitter-base junction, and…
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