Modulation of Superconducting Properties by Ferroelectric Polarization in Confined FE-S-FE Films

TL;DR

This paper demonstrates that ferroelectric polarization at interfaces can significantly enhance the modulation of superconducting properties in ultrathin films, leading to improved superconducting FET designs.

Contribution

It introduces a novel approach to control superconductivity via ferroelectric layers, surpassing traditional FE-S bilayer systems in modulation strength.

Findings

Stronger modulation of carrier density and transition temperature achieved.

Electric field effects are more pronounced in high-temperature superconductors.

Proposes a new multilayer design for superconducting FETs.

Abstract

We show that the electric polarization at the interface with ultrathin superconducting (S) films sandwiched between ferroelectric (FE) layers allows achievement of substantially stronger modulation of inner carrier density and superconducting transition temperature as compared to FE-S bilayers typically used in superconducting FETs. We find that not only the larger penetration depths but also the pairing symmetry should be responsible for the fact that the electric field effect in high temperature superconductors is much stronger than in conventional systems. Discussing the advantages of multilayers, we propose a novel design concept for superconducting electric field-effect transistors based on ferroelectric films.