Circuit with small-capacitance high-quality Nb Josephson junctions
Michio Watanabe, Yasunobu Nakamura, and Jaw-Shen Tsai
TL;DR
This paper presents a novel fabrication process for high-quality, small-capacitance Nb Josephson junctions, enabling the creation of Nb single-electron transistors with properties comparable to bulk Nb, suitable for quantum applications.
Contribution
The authors developed a new fabrication method for nanoscale Nb Josephson junctions using focused-ion-beam etching, achieving high-quality devices with bulk-like superconducting properties.
Findings
Superconducting gap energy matches bulk Nb values
Transition temperature of Nb SET aligns with bulk properties
Single-electron charging energy exceeds 1 K
Abstract
We have developed a fabrication process for nanoscale tunnel junctions which includes focused-ion-beam etching from different directions. By applying the process to a Nb/(Al-)Al_2O_3/Nb trilayer, we have fabricated a Nb single-electron transistor (SET), and characterized the SET at low temperatures, T=0.04-40 K. The superconducting gap energy and the transition temperature of the Nb SET agree with the bulk values, which suggests high quality Nb junctions. The single-electron charging energy of the SET is estimated to be larger than 1 K.
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