A Magnetic-Field-Effect Transistor and Spin Transport

TL;DR

This paper proposes a magnetic-field-effect transistor that produces highly spin-polarized currents and exhibits significant negative magnetoresistance by manipulating spin components via a magnetic shell.

Contribution

It introduces a novel device design that leverages magnetic shells to control spin transport and polarization in nonmagnetic channels.

Findings

Device can generate nearly fully spin-polarized current

Predicted giant negative magnetoresistance effect

Operates by withdrawing spin components through magnetic boundaries

Abstract

A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a grounded magnetic shell. The process underlying the operation of the device is the withdrawal of one of the spin components from the channel, and its dissipation through the grounded boundaries of the magnetic shell, resulting in a spin-polarized current in the nonmagnetic channel. The device may generate an almost fully spin-polarized current, and a giant negative magnetoresistance effect is predicted.