Modelling of Optical Detection of Spin-Polarized Carrier Injection into Light-Emitting Devices

TL;DR

This paper models the optical detection of spin-polarized carriers in light-emitting devices, analyzing how temperature and magnetic fields influence polarization and detection efficiency using operator Langevin equations.

Contribution

It introduces a comprehensive theoretical model incorporating thermal fluctuations, non-radiative processes, and g-factor temperature dependence for spin-polarized light emission.

Findings

Temperature and magnetic field significantly influence polarization degree.

Thermal fluctuations reduce detection efficiency at high temperatures.

The model provides insights into spin injection dynamics in non-magnetic semiconductors.

Abstract

We investigate the emission of multimodal polarized light from Light Emitting Devices due to spin-aligned carriers injection. The results are derived through operator Langevin equations, which include thermal and carrier-injection fluctuations, as well as non-radiative recombination and electronic g-factor temperature dependence. We study the dynamics of the optoelectronic processes and show how the temperature-dependent g-factor and magnetic field affect the polarization degree of the emitted light. In addition, at high temperatures, thermal fluctuation reduces the efficiency of the optoelectronic detection method for measuring spin-polarization degree of carrier injection into non-magnetic semicondutors.