Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices

TL;DR

This study investigates the phase of radiation-induced oscillations in GaAs/AlGaAs devices, confirming a consistent 1/4 cycle phase shift and suggesting a slight reduction in effective mass ratio.

Contribution

The paper provides experimental confirmation of a 1/4 cycle phase shift in magnetoresistance oscillations and indicates a small change in effective mass ratio in GaAs/AlGaAs devices.

Findings

Confirmed a $f$-independent 1/4 cycle phase shift.

Suggested a ~2% reduction in effective mass ratio.

Utilized in-situ magnetic field calibration with ESR.

Abstract

We examine the phase and the period of the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices utilizing in-situ magnetic field calibration by Electron Spin Resonance of DiPhenyl-Picryl-Hydrazal. The results confirm a $f$-independent 1/4 cycle phase shift with respect to the $hf = j\hbar\omega_{c}$ condition for $j \geq 1$, and they also suggest a small ($\approx$ 2%) reduction in the effective mass ratio, $m^{*}/m$, with respect to the standard value for GaAs/AlGaAs devices.