A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain

TL;DR

This paper proposes a novel spin MOSFET with half-metallic ferromagnet contacts that exhibits magnetization-dependent current control, high magnetocurrent ratios, and promising features for spintronic integrated circuits.

Contribution

It introduces a new spin MOSFET design with HMF contacts and provides a theoretical analysis demonstrating its high performance and potential for spintronic applications.

Findings

High current drive in parallel magnetization configuration

Large magnetocurrent ratios achieved

Satisfies key requirements for spintronic circuits

Abstract

We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF) contacts for the source and drain. When the magnetization configuration between the HMF source and drain is parallel (antiparallel), highly spin-polarized carriers injected from the HMF source to the channel are transported into (blocked by) the HMF drain, resulting in the magnetization-configuration-dependent output characteristics. Our two-dimensional numerical analysis indicates that the spin MOSFET exhibits high (low) current drive capability in the parallel (antiparallel) magnetization, and that extremely large magnetocurrent ratios can be obtained. Furthermore, the spin MOSFET satisfies other important requirements for "spintronic" integrated circuits, such as high amplification capability, low power-delay product, and low off-current.