Low temperature silicon epitaxy on hydrogen terminated Si(100) surfaces

TL;DR

This study investigates low-temperature silicon epitaxy on hydrogen-terminated Si(100) surfaces, revealing hydrogen's role in hindering adatom diffusion, affecting surface roughness, and remaining on the surface during growth.

Contribution

It provides new insights into how hydrogen termination influences silicon epitaxy at low temperatures, including diffusion suppression and surface roughening effects.

Findings

Hydrogen hinders Si adatom diffusion on Si(100) surfaces.

Hydrogen remains on the surface up to at least 10 monolayers.

Dihydride units further increase surface roughness.

Abstract

Si deposition on H terminated Si(100)-2x1 and 3x1 surfaces at temperatures 300-530 K is studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. The post-growth annealing effect is analyzed. Hydrogen is shown to remain on the growth front up to at least 10 ML. The dihydride units on the 3x1 surfaces further suppress the Si adatom diffusion and increase surface roughness.