Modulation of Thermoelectric Power of Individual Carbon Nanotubes
Joshua P. Small, Kerstin M. Perez, and Philip Kim
TL;DR
This study measures the thermoelectric power of individual carbon nanotubes at mesoscopic scales, revealing gate-dependent modulation and correlations with electrical conductance, especially at low temperatures and in semiconducting variants.
Contribution
It provides the first detailed measurement of TEP modulation in individual SWNTs, highlighting the effects of gate voltage and temperature on thermoelectric properties.
Findings
TEP correlates with conductance via Mott formula
Strong TEP modulation at low temperatures
Large TEP in semiconducting SWNTs due to Schottky barriers
Abstract
Thermoelectric power (TEP) of individual single walled carbon nanotubes (SWNTs) has been measured at mesoscopic scales using a microfabricated heater and thermometers. Gate electric field dependent TEP-modulation has been observed. The measured TEP of SWNTs is well correlated to the electrical conductance across the SWNT according to the Mott formula. At low temperatures, strong modulations of TEP were observed in the single electron conduction limit. In addition, semiconducting SWNTs exhibit large values of TEP due to the Schottky barriers at SWNT-metal junctions.
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